TEA1995T Datasheet PDF - NXP Semiconductors
Part Number | TEA1995T | |
Description | GreenChip dual synchronous rectifier controller | |
Manufacturers | NXP Semiconductors | |
Logo | ||
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GreenChip dual synchronous rectifier controller
Rev. 1 — 30 July 2015
Product data sheet
1. General description
The TEA1995T is the first product of a new generation of Synchronous Rectifier (SR)
controller ICs for switched mode power supplies. It incorporates an adaptive gate drive
method for maximum efficiency at any load.
The TEA1995T is a dedicated controller IC for synchronous rectification on the secondary
side of resonant converters. It has two driver stages for driving the SR MOSFETs, which
rectify the outputs of the central tap secondary transformer windings. The two gate driver
stages have their own sensing inputs and operate independently.
The TEA1995T can also be used in multi-output flyback converters with the SR MOSFET
placed at the low side.
The TEA1995T is fabricated in a Silicon-On-Insulator (SOI) process.
2. Features and benefits
2.1 Efficiency features
Adaptive gate drive for maximum efficiency at any load
Supply current in energy save operation below 200 A
2.2 Application features
Wide supply voltage range from 4.5 V to 38 V
Dual synchronous rectification for LLC resonant in SO8 package
Synchronous rectification for multi-output flyback converters
Supports 5 V operation with logic level SR MOSFETs
Differential inputs for sensing the drain and source voltages of each SR MOSFET
2.3 Control features
SR control without minimum on-time
Adaptive gate drive for fast turn-off at the end of conduction
UnderVoltage LockOut (UVLO) protection with active gate pull-down
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NXP Semiconductors
TEA1995T
GreenChip dual synchronous rectifier controller
7. Functional description
7.1 Introduction
The TEA1995T is a controller IC for synchronous rectification. It is perfectly suited to be
used in resonant applications. It can drive two synchronous rectifier MOSFETs on the
secondary side of the central tap transformer winding. Figure 3 shows a typical
configuration.
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7.2 Start-up and undervoltage lockout (VCC pin)
When the voltage on the VCC pin exceeds Vstart, the IC leaves the UVLO state and
activates the SR circuitry. When the voltage drops to below Vstop, the IC reenters the
UVLO state. The SR MOSFET gate driver outputs are actively kept low. For proper
operation, the VCC pin must be decoupled with an extra capacitor (not only with Cout)
between the VCC pin and the GND pin. To reduce inductance effects because of high gate
driver currents, the extra capacitor must be connected as close as possible to the IC.
7.3 Drain sense (DSA and DSB pins)
The drain sense pins are input pins capable of handling input voltages up to 100 V. At
positive drain sense voltages, the gate driver is in off-mode with pulled-down gate driver
pins (pins GDA or GDB). At negative drain sense voltages, the IC enables the SR through
sensing the drain source differential voltage.
TEA1995T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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