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What is IPS65R1K5CE?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "MOSFET ( Transistor )".


IPS65R1K5CE Datasheet PDF - Infineon Technologies

Part Number IPS65R1K5CE
Description MOSFET ( Transistor )
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


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IPS65R1K5CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
1500
m
Id. 5.2 A
Qg.typ
10.5
nC
ID,pulse
8.3
A
Eoss@400V
1.15
µJ
Type/OrderingCode
IPS65R1K5CE
Package
PG-TO 251
Marking
65S1K5CE
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31

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IPS65R1K5CE equivalent
650VCoolMOSªCEPowerTransistor
IPS65R1K5CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
650
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
1.26 1.50
3.28 -
6.5 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.1mA
µA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
VGS=10V,ID=1A,Tj=25°C
VGS=10V,ID=1A,Tj=150°C
f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
225 -
18 -
10 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 42 - pF ID=constant,VGS=0V,VDS=0...480V
-
7.7 -
ns
VDD=400V,VGS=13V,ID=1.5A,
RG=10.2;seetable9
-
5.9 -
ns
VDD=400V,VGS=13V,ID=1.5A,
RG=10.2;seetable9
-
33 -
ns
VDD=400V,VGS=13V,ID=1.5A,
RG=10.2;seetable9
-
18.2 -
ns
VDD=400V,VGS=13V,ID=1.5A,
RG=10.2;seetable9
Min.
-
-
-
-
Values
Typ. Max.
1.3 -
5.8 -
10.5 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=1.5A,VGS=0to10V
nC VDD=480V,ID=1.5A,VGS=0to10V
nC VDD=480V,ID=1.5A,VGS=0to10V
V VDD=480V,ID=1.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
Final Data Sheet
5
2016-03-31


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Part NumberDescriptionMFRS
IPS65R1K5CEThe function is MOSFET ( Transistor ). Infineon TechnologiesInfineon Technologies

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