IPS65R1K0CE Datasheet PDF - Infineon Technologies
Part Number | IPS65R1K0CE | |
Description | MOSFET ( Transistor ) | |
Manufacturers | Infineon Technologies | |
Logo | ||
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MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PCSilverbox,Adapters,LCD&PDPTVandindoorLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Id.typ
Qg.typ
ID,pulse
Eoss@400V
700
1000
7.2
15.3
12
1.5
V
mΩ
A
nC
A
µJ
Type/OrderingCode
IPS65R1K0CE
Package
PG-TO 251
Marking
65S1K0CE
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31
|
|
650VCoolMOSªCEPowerTransistor
IPS65R1K0CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
650
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
0.86 1.00
2.22 -
5.5 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.2mA
µA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=10V,ID=1.5A,Tj=25°C
VGS=10V,ID=1.5A,Tj=150°C
Ω f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
328 -
23 -
14 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 58.5 - pF ID=constant,VGS=0V,VDS=0...480V
-
6.6 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2Ω;seetable9
-
5.2 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2Ω;seetable9
-
41 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2Ω;seetable9
-
13.6 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2Ω;seetable9
Min.
-
-
-
-
Values
Typ. Max.
1.8 -
8-
15.3 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=2.2A,VGS=0to10V
nC VDD=480V,ID=2.2A,VGS=0to10V
nC VDD=480V,ID=2.2A,VGS=0to10V
V VDD=480V,ID=2.2A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Final Data Sheet
5
2016-03-31
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IPS65R1K0CE electronic component. |
Information | Total 14 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ IPS65R1K0CE.PDF Datasheet ] |
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