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Número de pieza | IPB240N03S4L-R9 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB240N03S4L-R9 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! IPB240N03S4L-R9
OptiMOS™-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on)
ID
30 V
0.92 mW
240 A
PG-TO263-7-3
Type
IPB240N03S4L-R9
Package
PG-TO263-7-3
Marking
4N03LR9
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=120 A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
240
240
960
750
190
±16
231
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2014-04-28
1 page IPB240N03S4L-R9
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
1000
900
10 V 4.5 V
4V
800
700
600
500
3.5 V
400
300
200
100
3V
2.8 V
0
0246
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
1000
-55 °C
175 °C
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
14
3V
12
3.5 V 6 V
10
8
6
4
2 4V
4.5 V
10 V
0
0 60 120 180 240
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 4.5 V; VGS = 10 V
2
25 °C
800
1.5
4.5 V
10 V
600
1
400
0.5
200
0
1
Rev. 1.1
234
V GS [V]
0
5 -60 -20 20 60 100 140 180
T j [°C]
page 5
2014-04-28
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPB240N03S4L-R9.PDF ] |
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