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PDF IPB240N03S4L-R8 Data sheet ( Hoja de datos )
| Número de pieza | IPB240N03S4L-R8 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPB240N03S4L-R8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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IPB240N03S4L-R8
OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on)
ID
30 V
0.76 mW
240 A
PG-TO263-7-3
Type
IPB240N03S4L-R8
Package
PG-TO263-7-3
Marking
4N03LR8
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=120 A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
240
240
960
945
190
±16
300
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2014-04-07
1 page  
IPB240N03S4L-R8
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
900 10 V 4.5 V
4V
800
700
600
500
400
300
200
100
0
024
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
600
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
3
2.5 3 V
3.5 V
3V
2
1.5
1
0.5
3.5 V
4V
4.5 V
10 V
0
6 0 50 100 150 200
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A
1.2
500 1
400
300
200
100
175 °C
25 °C
-55 °C
0
1 1.5 2 2.5 3 3.5 4
V GS [V]
VGS = 4.5 V
0.8
0.6
VGS = 10 V
0.4
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.1
page 5
2014-04-07
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB240N03S4L-R8.PDF ] | |
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