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What is IPA60R800CE?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "MOSFET ( Transistor )".


IPA60R800CE Datasheet PDF - Infineon Technologies

Part Number IPA60R800CE
Description MOSFET ( Transistor )
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


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IPD60R800CE,IPA60R800CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R800CEisFullPAKmarkingonly
DPAK
tab
2
1
3
PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
800
m
Id. 8.4 A
Qg.typ
17.2
nC
ID,pulse
15.7
A
Eoss@400V
1.6
µJ
Type/OrderingCode
IPD60R800CE
IPA60R800CE
Package
PG-TO 252
PG-TO 220 FullPAK
Marking
RelatedLinks
60S800CE / 6R800CE*
see Appendix A
Final Data Sheet
1 Rev.2.3,2016-08-08

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IPA60R800CE equivalent
600VCoolMOSªCEPowerTransistor
IPD60R800CE,IPA60R800CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table5Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table6Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table7Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
600
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
0.68 0.80
1.76 -
11 -
Unit Note/TestCondition
V VGS=0V,ID=0.25mA
V VDS=VGS,ID=0.17mA
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
VGS=10V,ID=2A,Tj=25°C
VGS=10V,ID=2A,Tj=150°C
f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
373 -
27 -
18 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 74 - pF ID=constant,VGS=0V,VDS=0...480V
-
9-
ns
VDD=400V,VGS=13V,ID=2.5A,
RG=6.8;seetable10
-
7-
ns
VDD=400V,VGS=13V,ID=2.5A,
RG=6.8;seetable10
-
50 -
ns
VDD=400V,VGS=13V,ID=2.5A,
RG=6.8;seetable10
-
12 -
ns
VDD=400V,VGS=13V,ID=2.5A,
RG=6.8;seetable10
Min.
-
-
-
-
Values
Typ. Max.
2-
8.9 -
17.2 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=2.5A,VGS=0to10V
nC VDD=480V,ID=2.5A,VGS=0to10V
nC VDD=480V,ID=2.5A,VGS=0to10V
V VDD=480V,ID=2.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Final Data Sheet
5 Rev.2.3,2016-08-08


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Part NumberDescriptionMFRS
IPA60R800CEThe function is MOSFET ( Transistor ). Infineon TechnologiesInfineon Technologies

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