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Datasheet SQ7414AEN Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SQ7414AEN | Automotive N-Channel MOSFET www.vishay.com
SQ7414AEN
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration
Package
60 0.026 0.036
16 Single PowerPAK 1212-8
PowerPAK® 1212-8 Single
D D8 D7 D6 5
FEATURES • Trenc |  Vishay | mosfet |
| 2 | SQ7414AENW | Automotive N-Channel MOSFET www.vishay.com
SQ7414AENW
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration
60 0.023 0.028
18 Single
PowerPAK® 1212-8W Single
D
D
D 6
D 7
8
5
FEATURES • TrenchFET® power | Vishay | mosfet |
SQ7 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SQ7002K | Automotive N-Channel MOSFET SQ7002K
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
TO-236 SOT-23
G 1
FEATURES
60 1.30 1.90 0.32 Single
D
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Vishay mosfet | | |
| 2 | SQ701 | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
SQ701
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o  Polyfet RF Devices transistor | | |
| 3 | SQ721 | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
SQ721
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o Polyfet RF Devices transistor | | |
| 4 | SQ741 | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
SQ741
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and o Polyfet RF Devices transistor | | |
| 5 | SQ7414AEN | Automotive N-Channel MOSFET www.vishay.com
SQ7414AEN
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration
Package
60 0.026 0.036
16 Single PowerPAK 1212-8
PowerPAK® 1212-8 Single
D D8 D7 D6 5
FEATURES • Trenc Vishay mosfet | | |
| 6 | SQ7414AENW | Automotive N-Channel MOSFET www.vishay.com
SQ7414AENW
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration
60 0.023 0.028
18 Single
PowerPAK® 1212-8W Single
D
D
D 6
D 7
8
5
FEATURES • TrenchFET® power Vishay mosfet | | |
| 7 | SQ7414EN | Automotive N-Channel MOSFET www.DataSheet.co.kr
SQ7414EN
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
PowerPAK 1212-8
FEATURES
60 0.025 0.036 5.6 Single
D
• TrenchFET® Power MOSFET • Vishay mosfet | |
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