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Datasheet PJE8403 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJE8403 | 20V P-Channel Enhancement Mode MOSFET PPJE8403
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-0.6A
SOT-523
Features
RDS(ON) , [email protected], [email protected]<340mΩ RDS(ON) , [email protected], [email protected]<420mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Desi |  Pan Jit International | mosfet |
PJE Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJE138L | 60V N-Channel Enhancement Mode MOSFET PPJE138L
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 160mA
Features
RDS(ON) , VGS@10V, ID@160mA<4.2Ω RDS(ON) , [email protected], ID@100mA<5Ω RDS(ON) , [email protected], ID@50mA<7Ω Advanced Trench Process Technology ESD Protected Specially Designed for Relay driver, Pan Jit International mosfet | | |
| 2 | PJE5V0M1FN2 | Low Capacitance TVS/ESD Protection PPJE5V0M1FN2
Low Capacitance TVS/ESD Protection
VRWM
5V
Features
Bidirectional ESD protection of one line IEC61000-4-2(ESD): ±15kV Air, ±8kV Contact Compliance IEC61000-4-4(EFT): 20A(5/50nS) IEC61000-4-5(Lightning): 2A(8/20S) Low leakage current, maximum of 0.5A at r Pan Jit International data | | |
| 3 | PJE5V0U8TB6 | Low Capacitance ESD Protection PPJE5V0U8TB6
Low Capacitance ESD Protection
VRWM
5V
Features
IEC61000-4-2(ESD): ±17kV Air, ±12kV Contact Compliance IEC61000-4-4(EFT): 40A(5/50nS) IEC61000-4-5(Lightning): 5A(8/20S) Low leakage current, maximum 0.1A at rated voltage Lead free in compliance with EU Ro Pan Jit International data | | |
| 4 | PJE8400 | 20V N-Channel Enhancement Mode MOSFET PPJE8400
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
1.1A
Features
RDS(ON) , [email protected], [email protected]<88mΩ RDS(ON) , [email protected], [email protected]<100mΩ RDS(ON) , [email protected], [email protected]<130mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Applicati Pan Jit International mosfet | | |
| 5 | PJE8401 | 20V P-Channel Enhancement Mode MOSFET PPJE8401
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-0.9A
Features
RDS(ON) , [email protected], [email protected]<130mΩ RDS(ON) , [email protected], [email protected]<160mΩ RDS(ON) , [email protected], [email protected]<210mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM A Pan Jit International mosfet | | |
| 6 | PJE8403 | 20V P-Channel Enhancement Mode MOSFET PPJE8403
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-0.6A
SOT-523
Features
RDS(ON) , [email protected], [email protected]<340mΩ RDS(ON) , [email protected], [email protected]<420mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Desi Pan Jit International mosfet | | |
| 7 | PJE8404 | 30V N-Channel Enhancement Mode MOSFET PPJE8404
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
30 V
Current
0.6A
SOT-523
Features
RDS(ON) , VGS@4,5V, [email protected]<220mΩ RDS(ON) , [email protected], [email protected]<290mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Designed fo Pan Jit International mosfet | |
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