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PDF BSP612P Data sheet ( Hoja de datos )
| Número de pieza | BSP612P | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP612P (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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BSP612P
OptiMOS™-P Small-Signal-Transistor
Features
• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
Product Summary
VDS
RDS(on),max
ID
VGS=10 V
VGS=4.5 V
-60
120
170
-3
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
PG-SOT-223
• Halogen-free according to AEC61249-2-21
V
mW
A
Type
BSS612P
Package
SOT223
Tape and Reel Information
H6327: 1000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Marking Halogen Free
BSP612P Yes
Packing
Non dry
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D T A=25 °C
T A=70 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
I D,pulse
E AS
dv /dt
T A=25 °C
I D =-3 A,
V DD =-25V,
R GS = 25 Ω
I D=-3 A, V DS=-48 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
Power dissipation1)
P tot T A=25 °C
Operating and storage temperature T j, T stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
-3.0
-2.44
-12
150
6
±20
1.8
-55 ... 150
1C
260 °C
55/150/56
A
mJ
kV/µs
V
W
°C
V
°C
°C
Rev 2.0
page 1
2015-10-07
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
20
6V
5V
10 V
15
10
5
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
250
BSP612P
4.5 V
4V
3.5 V
200
150
100
50
3.5 V
4V
4.5 V
5V
6V
10 V
0
0123456
VDS [V]
0
0123456
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
4 10
3
2
1
0
0
Rev 2.0
8
6
25 °C
125 °C
123
VGS [V]
4
2
0
40
page 5
246
ID [A]
8
2015-10-07
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSP612P.PDF ] | |
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