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What is 2N60-E?

This electronic component, produced by the manufacturer "Unisonic Technologies", performs the same function as "N-CHANNEL POWER MOSFET".

2N60-E Datasheet PDF - Unisonic Technologies

Part Number 2N60-E
Description N-CHANNEL POWER MOSFET
Manufacturers Unisonic Technologies 
Logo Unisonic Technologies Logo 


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UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 5.0@ VGS = 10V, ID =1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-974.C

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2N60-E equivalent
2N60-E
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R502-974.C


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N60-E electronic component.


Information Total 7 Pages
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Featured Datasheets

Part NumberDescriptionManufacturers
2N60-EThe function is N-CHANNEL POWER MOSFET.Unisonic Technologies
Unisonic Technologies

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