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What is IKP30N65F5?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "IGBT ( Insulated Gate Bipolar Transistor )".


IKP30N65F5 Datasheet PDF - Infineon

Part Number IKP30N65F5
Description IGBT ( Insulated Gate Bipolar Transistor )
Manufacturers Infineon 
Logo Infineon Logo 


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IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKP30N65F5
650VDuoPackIGBTanddiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl

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IKP30N65F5 equivalent
IKP30N65F5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.30mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.60 2.10
1.80 -
V
- 1.90 -
-
-
1.35 1.80
1.30 -
V
- 1.30 -
3.2 4.0 4.8 V
- - 40.0 µA
- - 4000.0
- - 100 nA
- 38.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=30.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 1800 -
- 45 - pF
-9-
- 65.0 - nC
- 7.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=23.0,RG(off)=23.0,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 19 - ns
- 9 - ns
- 170 - ns
- 10 - ns
- 0.28 - mJ
- 0.07 - mJ
- 0.35 - mJ
5 Rev.2.2,2014-12-04


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IKP30N65F5 electronic component.


Information Total 17 Pages
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Download [ IKP30N65F5.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
IKP30N65F5The function is IGBT ( Insulated Gate Bipolar Transistor ). InfineonInfineon

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