IGP20N65F5 Datasheet PDF - Infineon
Part Number | IGP20N65F5 | |
Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
Manufacturers | Infineon | |
Logo | ||
There is a preview and IGP20N65F5 download ( pdf file ) link at the bottom of this page. Total 14 Pages |
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Highspeed5FASTIGBTinTRENCHSTOPTM5technology
IGP20N65F5
650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
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IGP20N65F5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=20.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 1200 -
- 30 - pF
-5-
- 48.0 - nC
- 7.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=10.0A,
VGE=0.0/15.0V,
rG=32.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VCC=400V,IC=2.0A,
VGE=0.0/15.0V,
rG=32.0Ω,Lσ=30nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 20 - ns
- 11 - ns
- 165 - ns
- 17 - ns
- 0.16 - mJ
- 0.06 - mJ
- 0.22 - mJ
- 18 - ns
- 3 - ns
- 170 - ns
- 30 - ns
- 0.04 - mJ
- 0.02 - mJ
- 0.06 - mJ
5 Rev.2.1,2014-06-11
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IGP20N65F5 electronic component. |
Information | Total 14 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ IGP20N65F5.PDF Datasheet ] |
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