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Datasheet 2SD1620 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SD1620 | NPN Epitaxial Planar Silicon Transistor Ordering number:EN1719B
NPN Epitaxial Planar Silicon Transistor
2SD1620
1.5V, 3V Strobe Applications
Features
· Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.
· Large current capacity and highly resistant to breakdown.
· Excellent linearity of hF | Sanyo Semicon Device | transistor |
2 | 2SD1620 | NPN Epitaxial Planar Silicon Transistor SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SD1620
Features
Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high | Kexin | transistor |
3 | 2SD1620 | Bipolar Transistor Ordering number : EN1719D
2SD1620
Bipolar Transistor
10V, 3A, Low VCE(sat), NPN Single PCP
http://onsemi.com
Features
• Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted • Large current capacity and highly resistant to breakdown
• Excellent line | ON Semiconductor | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V Panasonic Semiconductor transistor | | |
2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | |
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