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PDF MTP3055V Data sheet ( Hoja de datos )
| Número de pieza | MTP3055V | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MTP3055V
Preferred Device
Power MOSFET
12 Amps, 60 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
• On−resistance Area Product about One−half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E−FET Predecessors
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and
TMOS E−FET
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous @ 25°C
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation @ 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
± 20
± 25
12
7.3
37
48
0.32
Operating and Storage Temperature Range
TJ, Tstg
−55 to
175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 12 Apk, L = 1.0 mH, RG = 25 Ω)
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RθJC
RθJA
TL
72
3.13
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
12 AMPERES
50 VOLTS
RDS(on) = 150 mΩ
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4 Drain
12
3
TO−220AB
CASE 221A
STYLE 5
MTP3055V
LLYWW
1
Gate
3
Source
2
Drain
MTP3055V
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP3055V
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Publication Order Number:
MTP3055V/D
1 page  
MTP3055V
12
10
8 Q1
QT
Q2
VGS
60 1000
VDD = 30 V
ID = 12 A
50 VGS = 10 V
TJ = 25°C
40 100
6 30
4 20
2
Q3
ID = 12 A
TJ = 25°C
10
VDS
00
0 1 2 3 4 5 6 7 8 9 10 11 12 13
QT, TOTAL CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
tr
td(off)
10 tf
td(on)
1
1 10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
0.13
dIS/dt = 100 A/μs
VDD = 25 V
0.12 TJ = 25°C
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
12
VGS = 0 V
10 TJ = 25°C
8
0.11
6
0.10
4
0.09 2
100
0.08
0
2 4 6 8 10
IS, SOURCE CURRENT (AMPS)
Figure 10. Stored Charge
12
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal
Resistance−General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 μs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RθJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
http://onsemi.com
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