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FDD6676AS Datasheet PDF - Fairchild Semiconductor

Part Number FDD6676AS
Description 30V N-Channel PowerTrench SyncFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 



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FDD6676AS datasheet, circuit
FDD6676AS
30V N-Channel PowerTrench® SyncFET
April 2008
tm
General Description
The FDD6676AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6676AS
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode using
Fairchild’s monolithic SyncFET technology.
Applications
DC/DC converter
Low side notebook
Features
90 A, 30 V
RDS(ON) = 5.7 m@ VGS = 10 V
RDS(ON) = 7.1 m@ VGS = 4.5 V
Includes SyncFET schottky body diode
Low gate charge (46nC typical)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
RoHS Compliant
D
G
S
DTO-P-2A5K2
(TO-252)
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6676AS
FDD6676AS
13’’
D
G
S
Ratings
30
±20
90
100
70
3.1
1.3
–55 to +150
1.8
40
96
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD6676AS Rev A1(X)

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FDD6676AS equivalent
Typical Characteristics
10
ID = 78A
8
6
4
VDS = 10V
20V
15V
2
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
100
RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
4000
3000
f = 1MHz
VGS = 0 V
Ciss
2000
1000
Coss
Crss
0
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics
50
SINGLE PULSE
RθJA = 96°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 96°C/W
P(pk
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6676AS Rev A1(X)

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Information Total 8 Pages
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