IRL3302PBF Datasheet PDF - International Rectifier
Part Number | IRL3302PBF | |
Description | Power MOSFET ( Transistor ) | |
Manufacturers | International Rectifier | |
Logo | ||
There is a preview and IRL3302PBF download ( pdf file ) link at the bottom of this page. Total 7 Pages |
Preview 1 page No Preview Available ! l Advanced Process Technology
l Optimized for 4.5V Gate Drive
l Ideal for CPU Core DC-DC Converters
l 150°C Operating Temperature
l Fast Switching
l Lead-Free
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD-95660
IRL3302PbF
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.020Ω
ID = 39A
S
TO-220AB
Max.
39
25
160
57
0.45
± 10
14
130
23
5.7
5.0
-55 to + 150
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Typ.
0.50
Max.
2.2
62
Units
°C/W
7/30/04
|
|
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRL3302PbF
300
ID
TOP
10A
250 15A
BOTTOM 23A
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRL3302PBF electronic component. |
Information | Total 7 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ IRL3302PBF.PDF Datasheet ] |
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