|
|
PDF NVMFD5875NL Data sheet ( Hoja de datos )
| Número de pieza | NVMFD5875NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NVMFD5875NL (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
NVMFD5875NL
Product Preview
Power MOSFET
60 V, 33 mW, 22 A, Dual N−Channel, Logic
Level, Dual SO8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVMFD5875NLWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1, 2,
3, 4)
Power Dissipation
RqJC (Notes 1, 2, 3)
Steady
State
Continuous Drain Cur-
rent RqJA (Notes 1 &
3, 4)
Power Dissipation
RqJA (Notes 1, 3)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
"20
22
15
32
16
7
5.8
3.2
2.2
80
−55 to
+175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−
to−Source Avalanche
Energy (TJ = 25°C,
VDD = 24 V, VGS =
10 V, RG = 25 W)
(IL(pk) = 14.5 A, L =
0.1 mH)
(IL(pk) = 6.3 A, L =
2 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 19 A
EAS 10.5 mJ
40
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Note 2, 3)
RqJC
4.65 °C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
www.onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
33 mW @ 10 V
45 mW @ 4.5 V
ID MAX
22 A
Dual N−Channel
D1
D2
G1 G2
S1 S2
1
DFN8 5x6
(SO8FL)
CASE 506BT
MARKING DIAGRAM
D1 D1
S1
G1 5875xx
S2 AYWZZ
G2
D2 D2
D1
D1
D2
D2
5875NL = Specific Device Code
for NVMFD5875NL
5875LW = Specific Device Code
for NVMFD5875NLWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package Shipping†
NVMFD5875NLT1G
DFN8 1500 / Tape &
(Pb−Free)
Reel
NVMFD5875NLWFT1G DFN8 1500 / Tape &
(Pb−Free)
Reel
NVMFD5875NLT3G
DFN8 5000 / Tape &
(Pb−Free)
Reel
NVMFD5875NLWFT3G DFN8 5000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. P1
1
Publication Order Number:
NVMFD5875NL/D
1 page  
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
0.02
1
0.01
0.1 Single Pulse
NVMFD5875NL
TYPICAL CHARACTERISTICS
Device Mounted on 650 mm2
2 oz Cu PCB
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 12. Thermal Response
10 100 1000
www.onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVMFD5875NL.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NVMFD5875NL | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |