DataSheet39.com

What is NTMS4P01R2?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "Power MOSFET ( Transistor )".


NTMS4P01R2 Datasheet PDF - ON Semiconductor

Part Number NTMS4P01R2
Description Power MOSFET ( Transistor )
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


There is a preview and NTMS4P01R2 download ( pdf file ) link at the bottom of this page.





Total 8 Pages



Preview 1 page

No Preview Available ! NTMS4P01R2 datasheet, circuit

NTMS4P01R2
Power MOSFET
−4.5 Amps, −12 Volts
PChannel EnhancementMode
Single SO8 Package
Features
High Density Power MOSFET with Ultra Low RDS(on)
Providing Higher Efficiency
Miniature SO8 Surface Mount Package Saves Board Space
Diode Exhibits High Speed with Soft Recovery
IDSS Specified at Elevated Temperature
DraintoSource Avalanche Energy Specified
Mounting Information for the SO8 Package is Provided
Applications
Power Management in Portable and BatteryPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
VDSS
12 V
RDS(ON) TYP
30 mΩ @ 4.5 V
ID MAX
4.5 A
Single PChannel
D
G
S
8
1
SO8
CASE 751
STYLE 13
MARKING DIAGRAM
& PIN ASSIGNMENT
N.C.
1
2
Source
3
Source 4
Gate
E4P01
LYWW
8 Drain
7 Drain
6 Drain
5 Drain
Top View
E4P01
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMS4P01R2
SO8
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
NTMS4P01R2/D

line_dark_gray
NTMS4P01R2 equivalent
NTMS4P01R2
4000
Ciss
VDS = 0 V VGS = 0 V
TJ = 25°C
3000
2000
Crss
Ciss
1000
Crss
Coss
0
10 8 6 4 2 0 2 4 6 8 10 12
VGS VDS
GATETOSOURCE OR
DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
VDD = 12 V
ID = 4.5 A
VGS = 4.5 V
100
td(off)
tf
tr
5
4
3 Q1
VDS
QT
Q2
VGS
10
8
6
24
1
ID = 4.5 A
TJ = 25°C
2
00
0 4 8 12 16 20 24
Qg, TOTAL GATE CHARGE (nC)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
4
VGS = 0 V
TJ = 25°C
3
2
td(on)
1
10
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
DRAINTOSOURCE DIODE CHARACTERISTICS
100
VGS = 10 V
SINGLE PULSE
10 TC = 25°C
1.0 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1 Mounted on 2sq. FR4 board
(1sq. 2 oz. Cu 0.06thick
single sided), 10s max.
0.01
0.1 1
dc
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
100
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Diode Reverse Recovery Waveform
http://onsemi.com
5


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NTMS4P01R2 electronic component.


Information Total 8 Pages
Link URL [ Copy URL to Clipboard ]
Download [ NTMS4P01R2.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
NTMS4P01R2The function is Power MOSFET ( Transistor ). ON SemiconductorON Semiconductor

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

NTMS     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search