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PDF NTMS4P01R2 Data sheet ( Hoja de datos )
| Número de pieza | NTMS4P01R2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTMS4P01R2
Power MOSFET
−4.5 Amps, −12 Volts
P−Channel Enhancement−Mode
Single SO−8 Package
Features
• High Density Power MOSFET with Ultra Low RDS(on)
Providing Higher Efficiency
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• IDSS Specified at Elevated Temperature
• Drain−to−Source Avalanche Energy Specified
• Mounting Information for the SO−8 Package is Provided
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
VDSS
−12 V
RDS(ON) TYP
30 mΩ @ −4.5 V
ID MAX
−4.5 A
Single P−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 13
MARKING DIAGRAM
& PIN ASSIGNMENT
N.C.
1
2
Source
3
Source 4
Gate
E4P01
LYWW
8 Drain
7 Drain
6 Drain
5 Drain
Top View
E4P01
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMS4P01R2
SO−8
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number:
NTMS4P01R2/D
1 page  
NTMS4P01R2
4000
Ciss
VDS = 0 V VGS = 0 V
TJ = 25°C
3000
2000
Crss
Ciss
1000
Crss
Coss
0
10 8 6 4 2 0 2 4 6 8 10 12
−VGS −VDS
GATE−TO−SOURCE OR
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
VDD = −12 V
ID = −4.5 A
VGS = −4.5 V
100
td(off)
tf
tr
5
4
3 Q1
−VDS
QT
Q2
−VGS
10
8
6
24
1
ID = −4.5 A
TJ = 25°C
2
00
0 4 8 12 16 20 24
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
4
VGS = 0 V
TJ = 25°C
3
2
td(on)
1
10
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
100
VGS = 10 V
SINGLE PULSE
10 TC = 25°C
1.0 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1 Mounted on 2″ sq. FR4 board
(1″ sq. 2 oz. Cu 0.06″ thick
single sided), 10s max.
0.01
0.1 1
dc
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Diode Reverse Recovery Waveform
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTMS4P01R2.PDF ] | |
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