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What is NTMFS5C430NL?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "Power MOSFET ( Transistor )".


NTMFS5C430NL Datasheet PDF - ON Semiconductor

Part Number NTMFS5C430NL
Description Power MOSFET ( Transistor )
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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NTMFS5C430NL
Power MOSFET
40 V, 1.5 mW, 200 A, Single NChannel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreesnt1R, 3qJ)C
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
C(Nuortreesnt1R, 2qJ,A3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
±20
200
140
110
53
37
26
3.8
1.9
900
55 to
+175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 120 A
Single Pulse DraintoSource Avalanche
Energy (IL(pk) = 15 A)
EAS 493 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase Steady State
RqJC
1.4 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
40
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
1.5 mW @ 10 V
2.2 mW @ 4.5 V
ID MAX
200 A
D (5)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
DFN5
(SO8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 5C430L
S AYWZZ
G
D
D
D
5C430L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
July, 2015 Rev. 0
1
Publication Order Number:
NTMFS5C430NL/D

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NTMFS5C430NL equivalent
100
50% Duty Cycle
10 20%
10%
5%
1 2%
1%
0.1
0.01
0.000001
Single Pulse
0.00001
0.0001
NTMFS5C430NL
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
1
10 100 1000
DEVICE ORDERING INFORMATION
Device
NTMFS5C430NLT1G
Marking
5C430L
Package
DFN5
(PbFree)
Shipping
1500 / Tape & Reel
NTMFS5C430NLT3G
5C430L
DFN5
(PbFree)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5


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Featured Datasheets

Part NumberDescriptionMFRS
NTMFS5C430NLThe function is Power MOSFET ( Transistor ). ON SemiconductorON Semiconductor

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