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PDF NTLUS3A39PZC Data sheet ( Hoja de datos )
| Número de pieza | NTLUS3A39PZC | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTLUS3A39PZC
Power MOSFET
−20 V, −5.2 A, Single P−Channel, ESD,
1.6x1.6x0.55 mm UDFN mCoolt Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
• Ultra Low RDS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Optimized for Power Management Applications for Portable
Products, Such as Cell Phones, PMP, Media Tablets, DSC, GPS, and
Others
• Battery Switch
• High Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Continuous Drain
Current (Note 1)
Steady
State
t≤5s
Power Dissipa-
tion (Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−20
±8.0
−5.2
−3.7
−6.4
1.5
V
V
A
W
Continuous Drain
Current (Note 2)
t≤5s
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
ID
2.3
−3.4 A
−2.4
Power Dissipation (Note 2)
TA = 25°C
PD
0.6 W
Pulsed Drain Current
tp = 10 ms
IDM
−17 A
Operating Junction and Storage
Temperature
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode) (Note 2)
IS −1 A
Lead Temperature for Soldering Purposes TL 260 °C
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 0
1
http://onsemi.com
V(BR)DSS
−20 V
MOSFET
RDS(on) MAX
39 mW @ −4.5 V
50 mW @ −2.5 V
81 mW @ −1.8 V
147 mW @ −1.5 V
ID MAX
−5.2 A
S
G
D
P−Channel MOSFET
MARKING DIAGRAM
1
6
UDFN6
(mCOOL])
CASE 517AU
1
AF MG
G
AF = Specific Device Code
M = Date Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
PIN CONNECTIONS
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTLUS3A39PZC/D
1 page  
NTLUS3A39PZC
TYPICAL CHARACTERISTICS
90
80 RqJA = 85°C/W
70
60
50 Duty Cycle = 0.5
40
30
20 0.2
10 0.1
0.05 0.02 0.01
0
1E−06
1E−05
1E−04
Single Pulse
1E−03
1E−02
1E−01
t, TIME (s)
1E+00
Figure 13. FET Thermal Response
1E+01
1E+02
1E+03
DEVICE ORDERING INFORMATION
Device
Package
Shipping†
NTLUS3A39PZCTAG
UDFN6
(Pb−Free)
3000 / Tape & Reel
NTLUS3A39PZCTBG
UDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTLUS3A39PZC.PDF ] | |
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