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PDF NTLUD4C26N Data sheet ( Hoja de datos )
| Número de pieza | NTLUD4C26N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTLUD4C26N
Power MOSFET
30 V, 7.3 A, Dual N−Channel,
2.0x2.0x0.55 mm mCoolt UDFN6 Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving
• Ultra Low RDS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Power Load Switch
• Wireless Charging
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
±12
7.3
5.3
9.1
1.70
V
V
A
W
t ≤ 5 s TA = 25°C
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
TA = 85°C
Power Dissipation (Note 2)
TA = 25°C
Pulsed Drain Current
tp = 10 ms
MOSFET Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ID
PD
IDM
TJ,
TSTG
IS
TL
2.63
4.8
3.4
0.72
22
-55 to
150
3.0
260
A
W
A
°C
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size,
2 oz. Cu.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 0
1
www.onsemi.com
V(BR)DSS
30 V
MOSFET
RDS(on) MAX
21 mW @ 10 V
24 mW @ 4.5 V
26 mW @ 3.7 V
28 mW @ 3.3 V
36 mW @ 2.5 V
65 mW @ 1.8 V
ID MAX
7.3 A
D1 D2
G1 G2
S1 S2
Dual N−Channel MOSFET
MARKING
DIAGRAM
6 UDFN6
1
CASE 517BF
AC MG
mCOOLt
G
1
AC = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Publication Order Number:
NTLUD4C26N/D
1 page  
NTLUD4C26N
TYPICAL CHARACTERISTICS
1000
100
Ciss
Coss
Crss
TJ = 25°C
VGS = 0 V
f = 1 MHz
10
0 5 10 15 20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
10
QT
8
30
25
6
4 Qgs
Qgd
20
15
10
2
0
30 0
TJ = 25°C
VDS = 15 V
ID = 5 A
5
0
2 4 6 8 10
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source vs. Total Charge
100.0
VDD = 15 V
ID = 15 A
VGS = 4.5 V
10.0
td(off)
tf
tr
td(on)
2.0
VGS = 0 V
1.0
TJ = −55°C
TJ = 25°C
TJ = 125°C
1.0
1
10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
1.80
1.60
ID = 250 mA
10 1.40
10 ms
1.20
1
100 ms
1.00
VGS < 10 V
TA = 25°C
Single Pulse Response
0.1
RDS(on) Limit
Thermal Limit
0.01
0.1
Package Limit
1
10
1 ms
10 ms
dc
100
0.80
0.60
0.40
0.20
0.00
−50 −25
0
25 50 75 100 125 150 175
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Figure 12. Threshold Voltage
Safe Operating Area
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| PDF Descargar | [ Datasheet NTLUD4C26N.PDF ] | |
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