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What is IRF3711ZPbF?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


IRF3711ZPbF Datasheet PDF - International Rectifier

Part Number IRF3711ZPbF
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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Total 12 Pages



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No Preview Available ! IRF3711ZPbF datasheet, circuit

Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD - 95530
IRF3711ZPbF
IRF3711ZSPbF
IRF3711ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 6.0m: 16nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiÃRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Notes  through ‡ are on page 12
www.irf.com
TO-220AB
IRF3711Z
D2Pak
IRF3711ZS
Max.
20
± 20
92 h
65 h
380
79
40
0.53
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.89
–––
62
40
TO-262
IRF3711ZL
Units
V
A
W
W/°C
°C
Units
°C/W
1
7/20/04

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IRF3711ZPbF equivalent
IRF3711Z/S/LPbF
100
LIMITED BY PACKAGE
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.4
2.0
1.6 ID = 250µA
1.2
0.8
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτ=iRi/iRi
R2R2
τ2 τ2
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.894 0.000306
τ3τ3 0.600 0.001019
0.401 0.006662
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF3711ZPbF electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
IRF3711ZPbFThe function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier

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