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AON6702 Datasheet PDF - Alpha & Omega Semiconductors

Part Number AON6702
Description 30V N-Channel MOSFET
Manufacturers Alpha & Omega Semiconductors 
Logo Alpha & Omega Semiconductors Logo 

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AON6702 datasheet, circuit
AON6702
30V N-Channel MOSFET
SRFET TM
General Description
SRFETTM AON6702 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
85A
< 2m
< 3m
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
85
67
260
26
20
72
259
83
33
2.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14
40
1
Max
18
55
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2: November 2010
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AON6702 equivalent
AON6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
230
200 TA=25°C
170
140 TA=125°C
TA=100°C
110
80
TA=150°C
50
20
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
90
80
70
60
50
40
30
20
10
0
0
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001 0.001
0.1
10 1000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
PD
Single Pulse
Ton
T
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Rev 2: November 2010
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Information Total 7 Pages
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