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Número de pieza | AOL1206 | |
Descripción | 30V N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOL1206 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOL1206
30V N-Channel MOSFET
General Description
Product Summary
The AOL1206 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss.In addition,switching behavior is well controlled
with a "Schottky style" soft recovery body diode.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
54A
< 6m:
< 8.5m:
UltraSO-8TM
Top View
Bottom View
D
G
S
S
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
54
42
250
16
13
30
45
62
31
2.7
1.7
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RTJA
RTJC
Typ
16
38
2
Max
20
46
2.4
Rev0 : Feb 2010
www.aosmd.com
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
1 page AOL1206
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
TA=25°C
TA=150°C
TA=100°C
75
60
45
TA=125°C
30
15
10.0
1 10 100 1000
Time in avalanche, tA (Ps)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note F)
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
140
120 TA=25°C
100
17
80 5
60 2
10
40
20
0
0.001 0.01 0.1 1 10 1000 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZTJA.RTJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RTJA=46°C/W
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Feb 2010
www.aosmd.com
Page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOL1206.PDF ] |
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