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Número de pieza | AON6206 | |
Descripción | 30V N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON6206 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AON6206
30V N-Channel MOSFET
General Description
Product Summary
The AON6206 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss.In addition,switching behavior is well controlled
with a "Schottky style" soft recovery body diode.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
24A
< 6.5mΩ
< 9mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
24
19
150
20
16
30
45
31
12
4.2
2.7
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
25
55
3
Max
30
65
4
Rev 0: Nov. 2009
www.aosmd.com
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
1 page AON6206
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
TA=25°C
40
TA=100°C
30
TA=150°C
TA=125°C
10.0
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
30
25
20
15
10
5
0
0
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001
0.001
0.1
10 1000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Nov. 2009
www.aosmd.com
Page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AON6206.PDF ] |
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