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SiSA12DN Datasheet PDF - Vishay

Part Number SiSA12DN
Description N-Channel 30 V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 

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SiSA12DN datasheet, circuit
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N-Channel 30 V (D-S) MOSFET
SiSA12DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
0.0043 at VGS = 10 V
30
0.0060 at VGS = 4.5 V
ID (A)a, g
25
25
Qg (Typ.)
13.6 nC
PowerPAK® 1212-8
3.3 mm
D
8D
7
D
6
D
5
S
1S
3.3 mm
2
S
3
G
4
Bottom View
Ordering Information:
SiSA12DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen IV Power MOSFET
• 100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Switch Mode Power Supplies
• Personal Computers and Servers
• Telecom Bricks
• VRM’s and POL
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
30
+ 20, - 16
25g
25g
22b, c
18b, c
80
23g
2.9b, c
15
11
28
18
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
29
3.6
36
°C/W
4.5
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. Package limited.
Document Number: 63787
www.vishay.com
S12-0311-Rev. A, 13-Feb-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SiSA12DN equivalent
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80 40
SiSA12DN
Vishay Siliconix
60
40
20 Package Limited
32
24
16
8
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63787
www.vishay.com
S12-0311-Rev. A, 13-Feb-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Information Total 13 Pages
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