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Número de pieza | SUP60N02-4m5P | |
Descripción | N-Channel 20-V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
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Vishay Siliconix
N-Channel 20-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
0.0045 at VGS = 10 V
20
0.0065 at VGS = 4.5 V
ID (A)a
60
60
TO-220AB
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• OR-ing
D
RoHS
COMPLIANT
DRAIN connected to TAB
G
GD S
Top View
Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TA = 25 °Cd
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)d
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Symbol
RthJA
RthJC
S
N-Channel MOSFET
Limit
20
± 20
60a
60a
120
50
125
120c
3.75
- 55 to 175
Limit
40
1.25
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 69821
S-80182-Rev. A, 04-Feb-08
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150 1000
SUP60N02-4m5P
Vishay Siliconix
120
90
Package Limited
60
30
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature (°C)
Drain Current vs. Ambient Temperature
1
Duty Cycle = 0.5
Limited by rDS(on)*
100
10
10 µs, 100 µs
1 ms
10 ms
100 ms
1 s, 10 s
1
0.1
0.1
TA = 25 °C
Single Pulse
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69821.
Document Number: 69821
S-80182-Rev. A, 04-Feb-08
www.vishay.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SUP60N02-4m5P.PDF ] |
Número de pieza | Descripción | Fabricantes |
SUP60N02-4m5P | N-Channel 20-V (D-S) MOSFET | Vishay |
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