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What is A1163?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "PNP Transistor - 2SA1163".


A1163 Datasheet PDF - Toshiba Semiconductor

Part Number A1163
Description PNP Transistor - 2SA1163
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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2SA1163
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1163
Audio Frequency General Purpose Amplifier Applications
High voltage: VCEO = 120 V
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 200 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2713
Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO 5 V
Collector current
IC
100
mA
Base current
IB 20 mA
Collector power dissipation
PC 150 mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
55 to 125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-59
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
IEBO
VCB = −120 V, IE = 0
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat)
fT
Cob
NF
IC = −10 mA, IB = −1 mA
VCE = −6 V, IC = −1 mA
VCB = −10 V, IE = 0, f = 1 MHz
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
Rg = 10 kΩ,
Note: hFE classification GR (G): 200 to 400, BL (L): 350 to 700
( ) marking symbol
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
200 700
⎯ ⎯ −0.3 V
100 MHz
4 pF
1.0 10 dB
Marking
Start of commercial production
1982-12
1 2014-03-01


Part Details

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