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PDF Si2392DS Data sheet ( Hoja de datos )
| Número de pieza | Si2392DS | |
| Descripción | N-Channel 100 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 100 V (D-S) MOSFET
Si2392DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
ID (A)a
0.126 at VGS = 10 V
3.1
100
0.144 at VGS = 6 V
2.9
0.189 at VGS = 4.5 V
2.6
Qg (Typ.)
2.9 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2392DS (E2)*
* Marking Code
Ordering Information:
Si2392DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converters / Boost Converters
• Load Switch
• LED Backlighting in LCD TVs
• Power Management for Mobile Computing
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
5 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
RthJA
RthJF
Typical
75
40
Limit
100
± 20
3.1
2.5
2.2b,c
1.8b,c
8
2.1
1b, c
3
0.45
2.5
1.6
1.25b, c
0.8b, c
- 55 to 150
Maximum
100
50
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 64024
For technical questions, contact: [email protected]
www.vishay.com
S13-0793-Rev. A, 15-Apr-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.5
Si2392DS
Vishay Siliconix
2.8
2.1
1.4
0.7
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
3 1.0
2.4 0.8
1.8 0.6
1.2 0.4
0.6 0.2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64024
For technical questions, contact: [email protected]
www.vishay.com
S13-0793-Rev. A, 15-Apr-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet Si2392DS.PDF ] | |
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