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PDF MBRB2060CT Data sheet ( Hoja de datos )
| Número de pieza | MBRB2060CT | |
| Descripción | Schottky Rectifier ( Diode ) | |
| Fabricantes | SANGDEST MICROELECTRONICS | |
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Hay una vista previa y un enlace de descarga de MBRB2060CT (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0118, Rev. -
MBRB2060CT
Green Products
Applications:
MBRB2060CT SCHOTTKY RECTIFIER
• Switching power supply
• Converters
• Free-Wheeling diodes
• Reverse battery protection
Features:
• 150 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• All SMC parts are traceable to the wafer lot
• Additional testing can be offered upon request
Mechanical Dimensions (In mm / Inches):
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in
millimeters
Min. Typical Max.
4.55 4.70 4.85
0 0.10 0.25
2.59 2.69 2.89
0.71 0.81 0.96
1.27
0.36 0.38 0.61
1.17 1.27 1.37
8.55 8.70 8.85
6.40
10.01
10.16
10.31
7.6
9.98
10.08
10.18
2.54
14.6 15.1 15.6
2.00 2.30 2.70
1.17 1.27 1.40
2.20
0.25BSC
0 - 8°
5°
4°
4°
OPTION 1(HD)
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
1 page  
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0118, Rev. -
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Reverse Current
(per leg) *
Junction Capacitance
(per leg)
Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
Condition
VF1 @ 10A, Pulse, TJ = 25 °C
IR1
CT
dv/dt
@VR = rated VR Pulse
TJ = 25 °C
@VR = 4V, TC = 25 °C
fSIG = 1MHz
-
MBRB2060CT
Green Products
Max.
0.80
1.0
400
10,000
Units
V
mA
pF
V/μs
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
Typical Thermal Resistance
Case to Heat Sink
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
RθCS
wt
Condition
-
-
DC operation
Mounting surface, smooth and
greased(only for TO-220)
-
D2PAK
Specification
-55 to +150
-55 to +150
2.3
0.50
Units
°C
°C
°C/W
°C/W
1.85
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MBRB2060CT.PDF ] | |
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