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Número de pieza | STN4438 | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Stanson | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STN4438 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! STN4438
N Channel Enhancement Mode MOSFET
8.2A
DESCRIPTION
STN4438 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
l 60V/8.2A, RDS(ON) = 25mΩ (Typ.)
@VGS = 10V
l 60V/7.6A, RDS(ON) = 30mΩ
@VGS = 4.5V
l Super high density cell design for
extremely low RDS(ON)
l Exceptional on-resistance and maximum
DC current capability
l SOP-8 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
PDF created with pdfFactory Pro trial version www.pdffactory.com
Copyright © 2008, Stanson Corp.
STN4438 2009. V1
1 page STN4438
N Channel Enhancement Mode MOSFET
8.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
PDF created with pdfFactory Pro trial version www.pdffactory.com
Copyright © 2008, Stanson Corp.
STN4438 2009. V1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet STN4438.PDF ] |
Número de pieza | Descripción | Fabricantes |
STN4438 | N-Channel Enhancement Mode MOSFET | Stanson |
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