2N4360 Datasheet PDF ( Pinout ) - P-CHANNEL FIELD EFFECT TRANSISTORS

2N4360 Datasheet PDF - New Jersey Semiconductor

Part Number	*2N4360*
Description	P-CHANNEL FIELD EFFECT TRANSISTORS
Manufacturers	New Jersey Semiconductor
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<^£mi-Conauctoi t-Proaucts., Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

UlSA 2N4342 - 2N4343 - 2N4360

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376'8960

P-CHANNEL FIELD EFFECT TRANSISTORS

DIFUSSED SILICON PLAN.4R TRANSSITORS

• LOW NOISE VOLTAGE -• 0,08 uV//Hz (MAX) @ 100 Hz

• HIGH YI, •• 4000 umhos (MIN)

• LOW rDS (on) •- 350 Q (MAX)

• LOW COST EPOXY PACKAGE

ABSOLUTE MAXIMUM RATINGS (Note 1)

Maximum Temperatures

Operating Junction Temperature

Storage Temperature .

Soldering Temperature (10 seconds time limit)

Maximum Power Dissipation

Total Dissipation at 25°C Case Temperature (Note 2)

at 65°C Case Temperature (Note 2)

at 25°C Ambient Temperature (Note 2)

Maximum Voltages

BVoo/O-/OA

B VDY,SCOV,

BV _

Source to Gate Breakdown Voltage

Drain to Source Breakdown Voltage

Drain to Gate Breakdown Voltage

PHYSICAL DIMENSIONS

.216 n,, ^

.185DIA'

125°C

-55°C to +125°C

26(KC

t ^| ' ^\ .250

.120 ) i

.140

.100 I

Ceram|cy

;j'i

3 LEADS -,'' fl 0 0

:°f6DlA.

U UU

-400 M'N

2N4360

-20 Volts

-?,0 V"ltS

0.5 Watt

0.3 Watt

l^^-100 DRAIN

.050 -j ;— i /-Lead No. 2

SOURCE

JH-^

GATE

Lead No. 1 -*/1 ,X (\- Lead No. 3

, r*o' I <A

0.2 Watt

2N4342

2N4343 OTOFLAT

-25 Volts

45- .'V^y

\v <

NOTfS All ftmercicrc in inches

^Sl^r '"'•'"

-?« Vnlr«

ELECTRICAL CHARACTERISTICS (25°C Free Air Temperature unless otherwise noted)

Symbol

Characteristic

2N4360

?M4342

2N4343

Min. Typ. Max. Min. Typ,Max Min. Typ. MaxU. nits

Test Conditions

en Equivalent Input Noise Voltage

(f = 100 Hz|

XF Noise Figure

(r = too HZ)

0,02

0.1

•/ Ytj

Y| ?

^ BV,..

:} lrs,

VG., o,

V,,,

VU,O,

•f VGS (off.)

1.,^,

U,,-,(65 C)

ObO

'i3

r^lon)

R (Y }

'' ls

Forward Transadmittance {i =1.0 kHz)

O'jiput Admittance (f = 1.0kHz)

Gate to SuurO*.- Breakduwn Voltage

Drain Current

C.llf.. tuSnurcf Voltage

G.it<? tiiS«urre Vi.lIJt't

Gale to Source Voltayt.

Gate to Source Cutoff Voltage

Gute Reverse Curreiit

G;ite Reverse Current

Input C:ip.icit:u:cc (f - 1.0 MHz)

Reverse Transfer Cup:icit:iiu:e

(f ' 1.0 MHz)

Drain "On" Resistance (f - i ,0kHz)

FurwarM Tr.lM,sOL.niiuctar.i.ie

(f ^ 1.0 MHz)

2000

3.0

0.7

1500

.1000

5.0

0.15

.002

3.0

350

3000

0.08 0.02 0.08

1.5 0.1 1.5

8000 2000 3500 6000 4000

100 25 75

26 25

DO 4.0 7.0 12 10

9.0

0.7 3.0 5.0

1.8

to 5.5

10 0.15 10

0.5 0.002 0.5

20 15 20

5.0 3.0 5.0

700

500

300 700

2500 3000

0.02 0.08

0.1 1.5

6000 8000

35 100

18 30

6.0

0.15

0.002

3.0

9.0

0.5

5.0

180 350

5500

(iV/y/Hi

umhos

VD, = -10 V VGS = 0

VDS = - i o v VGS - o

RG = 1.0 MS! BW = 15

VDS = -10 V Vcs = 0

"mhQ9

Volts

VDS " '10 V VGS = °

IG = 10 ,,A VDS = 0

Vos = -10 V Vcs = 0

VDS = -10 V ID ^ 0 . 3 mA

VDS = -10 V ID

0.4 mA

VDS = -10 V ID = 1.0 mA

V(,s ' -10 V I0

1.0 HA

VOrfa = 15 V VD_S. - 0

VGS ' i5 V VDS ' °

VDS = - 1 0 V VGS = 0

VDg =-10 V VQS = 0

Ohms ID = 0

VC! = 0

,.mhos Vn. ' -10 V ¥„ = 0

LJQ

IjO

NOTES:

(1) rhfse r;itint;s ;ire limiting values :ibuve wbii;h the serviceability of ;iny individual semiconductor device may lie impaired,

(2) Thfvse ratings 'Uvtr ;\m j ' i n c t i - m temperature (it 125' C and junction to ca&(?

therm.U re.-iistuncL' of 500 c Wutt (derating f.ictor of 2,0 mW/:C).

thermal resistance of 200' C Watt (derating; f

(3) Buth 2N4342 and 2N4343 typie.il carves apply to 2N4360.

,1 patiT.t'.i:! F.ui'Lhiki pr

,ir of 5.0mW/"C): junction to ambient

NJ Semi-Conductors reserves the right to changetest conditions, parameters limits and package dimensions without

notice information rumisncd by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to

press. HoweverNJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use N I

Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

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2N4360 Datasheet PDF - New Jersey Semiconductor

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