BC636TA Datasheet PDF - Fairchild Semiconductor
|Description||PNP EPITAXIAL SILICON TRANSISTOR|
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PNP Epitaxial Silicon Transistor
• Switching and Amplifier Applications
• Complement to BC635
Tape & Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Collector-Emitter Voltage at RBE = 1 KΩ
Peak Collector Current
-65 to 150
© 2004 Fairchild Semiconductor Corporation
BC636 Rev. 1.3
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WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Advance Information Formative / In Design
No Identification Needed
Not In Production
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
© Fairchild Semiconductor Corporation
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|BC636TA||The function is PNP EPITAXIAL SILICON TRANSISTOR.|
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