BC807-40W Datasheet PDF - ON Semiconductor
| Part Number | BC807-40W | |
| Description | General Purpose Transistors | |
| Manufacturers | ON Semiconductor | |
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BC807-25W, BC807-40W
General Purpose
Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−45
−50
−5.0
−500
V
V
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
460 mW
272 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm2.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
5x M G
G
1
5x = Device Code
x = B or C
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 4
1
Publication Order Number:
BC807−25W/D
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BC807−25W, BC807−40W
TYPICAL CHARACTERISTICS − BC807−40W, SBC807−40W
1000
900
800 150°C
VCE = 1 V
700
600
500 25°C
400
300 −55°C
200
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 9. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
0.8
0.7
−55°C
25°C
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
1000
VCE = 1 V
TA = 25°C
1
IC/IB = 10
0.1
25°C
150°C
−55°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9 −55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 12. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (A)
Figure 13. Current Gain Bandwidth Product
vs. Collector Current
http://onsemi.com
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| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BC807-40W.PDF Datasheet ] | |
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