BC846 Datasheet PDF - Philips
| Part Number | BC846 | |
| Description | NPN general purpose transistors | |
| Manufacturers | Philips | |
| Logo |  |
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BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
Rev. 06 — 7 February 2006
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Table 1: Product overview
Type number [1] Package
Philips
BC846
SOT23
BC846W
SOT323
BC846T
SOT416
BC546A [2]
SOT54
BC546B [2]
SOT54
JEITA
-
SC-70
SC-75
SC-43A
SC-43A
JEDEC
TO-236AB
-
-
TO-92
TO-92
PNP
complement
BC856
BC856W
BC856T
BC556A
BC556B
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
s General-purpose transistors
s SMD plastic packages
s Two different gain selections
1.3 Applications
s General-purpose switching and amplification
1.4 Quick reference data
Table 2:
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
hFE group A
hFE group B
Conditions
open base
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
- - 65 V
- - 100 mA
110 -
450
110 180 220
200 290 450
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Philips Semiconductors
BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A;
Tj = 150 °C
VEB = 5 V; IE = 0 A
hFE
VCEsat
VBEsat
VBE
fT
DC current gain
hFE group A
hFE group B
VCE = 5 V; IC = 10 µA
VCE = 5 V; IC = 10 µA
DC current gain
VCE = 5 V; IC = 2 mA
hFE group A
hFE group B
VCE = 5 V; IC = 2 mA
VCE = 5 V; IC = 2 mA
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
base-emitter voltage IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
transition frequency VCE = 5 V; IC = 10 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Ce emitter capacitance VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
NF noise figure
IC = 200 µA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
Min
-
-
-
-
-
110
110
200
-
[1] -
[2] -
[2] -
[3] 580
[3] -
100
-
-
-
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] VBEsat decreases by approximately 1.7 mV/K with increasing temperature.
[3] VBE decreases by approximately 2 mV/K with increasing temperature.
Typ
-
-
-
180
290
-
180
290
90
200
760
900
660
-
-
2
11
2
Max
15
5
100
-
-
450
220
450
200
400
-
-
700
770
-
3
-
10
Unit
nA
µA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
BC846_BC546_SER_6
Product data sheet
Rev. 06 — 7 February 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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