uPA2757GR Datasheet PDF - Renesas
| Part Number | uPA2757GR | |
| Description | SWITCHING N-CHANNEL POWER MOS FET | |
| Manufacturers | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2757GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2757GR is Dual N-channel MOS Field Effect
Transistors designed for switching application.
FEATURES
• Low on-state resistance
RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
• Low gate charge
QG = 10 nC TYP. (VGS = 10 V)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
85
1 : Source 1
2 : Gate 1
7, 8 : Drain 1
3 : Source 2
4 : Gate 2
5, 6 : Drain 2
14
5.37 MAX.
6.0 ± 0.3
4.4
0.8
1.27 0.78 MAX.
0.5 ± 0.2
0.10
ORDERING INFORMATION
0.40
+0.10
–0.05
0.12 M
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
μ PA2757GR-E1-AT Note
μ PA2757GR-E2-AT Note
Pure Sn
Tape 2500
p/reel
Power SOP8
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge. VESD ± 600 V TYP. (C = 100 pF, R = 1.5 kΩ)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18206EJ2V0DS00 (2nd edition)
Date Published November 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006, 2007
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μ PA2757GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
20 VGS = 10 V
15 4.5 V
10
5
Pulsed
0
0 0.5 1 1.5
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.5
2
1.5
1
0.5
VDS = 10 V
ID = 1 mA
0
-50 0
50 100
Tch - Channel Temperature - °C
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
Pulsed
80
60 VGS = 4.5 V
40
20 10 V
0
1 10 100
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
100
VDS = 10 V
10 Pulsed
1
0.1
0.01
TA = 150°C
75°C
25°C
−25°C
0.001
0.0001
0
123
VGS - Gate to Source Voltage - V
4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
0.1
0.01
0.001
100 μ
−25°C
25°C
75°C
TA = 150°C
VDS = 10 V
Pulsed
1 m 10 m 100 m 1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
ID = 3.0 A
Pulsed
80
60
40
20
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
Data Sheet G18206EJ2V0DS
5
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| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ uPA2757GR.PDF Datasheet ] | |
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| Part Number | Description | Manufacturers |
| uPA2757GR | The function is SWITCHING N-CHANNEL POWER MOS FET. | Renesas |
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