uPA2560 Datasheet PDF - Renesas
| Part Number | uPA2560 | |
| Description | Dual N-CHANNEL MOSFET | |
| Manufacturers | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2560
Dual N-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The μ PA2560 is Dual N-channel MOSFETs designed for Back light
inverters and power management applications of portable equipments.
Dual N-channel MOSFETs are assembled in one package, to
contribute minimize the equipments.
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A)
RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2 A)
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit, 5 s) Note2
Total Power Dissipation (2 units, 5 s) Note2
ID(DC)
ID(pulse)
PT1
PT2
±4.5 A
±18 A
1.5 W
2.2 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mm.
PACKAGE DRAWING (Unit: mm)
2.9±0.1
0.65
8
5
A
0.17±0.05
0 to 0.025
1
0.32±0.05
4
0.05 M S A
S
1: Source1
2: Gate1
3: Source2
4: Gate2
5, 6: Drain2
7, 8: Drain1
EQUIVALENT CIRCUIT (1/2)
Drain
ORDERING INFORMATION
PART NUMBER
μ PA2560T1H-T1-AT Note
μ PA2560T1H-T2-AT Note
LEAD PLATING
PACKING
PACKAGE
Pure Sn
8 mm embossed taping
8-pin VSOF (2429)
3000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: 2560
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19947EJ1V0DS00 (1st edition)
Date Published September 2009 NS
Printed in Japan
2009
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
100
80 VGS = 4.5 V
60
40 10 V
20 ID = 2 A
Pulsed
0
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
VDD = 15 V
VGS = 10 V
RG = 6 Ω
td(off)
10
td(on)
tr
1
0.1
tf
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
0.01
0.001
0.0001
0
VGS = 0 V
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
μ PA2560
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
VGS = 0 V
f = 1.0 MHz
10
0.01 0.1
1
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
25 10
VDD = 24 V
20 15 V
6V
15
8
6
10
5
0
0
VGS 4
2
VDS
ID = 4.5 A
0
1234567
QG - Gate Charge - nC
Data Sheet G19947EJ1V0DS
5
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Featured Datasheets
| Part Number | Description | Manufacturers |
| uPA2560 | The function is Dual N-CHANNEL MOSFET. | Renesas |
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