IRF6702M2DTR1PbF Datasheet PDF - International Rectifier
| Part Number | IRF6702M2DTR1PbF | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | International Rectifier | |
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Applications
l Dual Common Drain Control MOSFETs for
Multiphase DC-DC Converters
Features
l Replaces Two discrete high side MOSFETs
l Optimized for High Frequency Switching
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Compatible with existing Surface Mount
Techniques
l RoHS Compliant and Halogen Free
l 100% Rg tested
PD - 97540
IRF6702M2DTRPbF
IRF6702M2DTR1PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
9.4nC 3.3nC 1.2nC 17nC 6.3nC 1.8V
G1
S1
G2
S2
Applicable DirectFET Outline and Substrate Outline
DirectFET ISOMETRIC
S1 S2 SB
M2 M4 MA L4 L6 L8
Description
The IRF6702M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package.
The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching
losses. The reduced losses make this product ideal for high efficiency multiphase DC-DC converters that power the latest generation of
processors operating at higher frequencies.
The IRF6702M2DPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the highest power density for two MOSFETs in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
Absolute Maximum Ratings (each die operating consecutively)
Parameter
Max.
Units
VDS Drain-to-Source Voltage
30 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
15
13 A
47
130
71 mJ
12 A
25 14.0
20
ID = 15A
12.0 ID= 12A
VDS= 24V
10.0
VDS= 15V
15 8.0
10
TJ = 125°C
6.0
5
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
4.0
2.0
0.0
0
5 10 15 20 25
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.99mH, RG = 25Ω, IAS = 12A.
1
07/21/2010
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1000
100
TJ = 175°C
TJ = 25°C
10 TJ = -40°C
1
VGS = 0V
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
50
IRF6702M2DTR/TR1PbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
1msec
10 DC
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
3.0
40 2.5
30 2.0
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
80
TJ = 25°C
60
40 TJ = 175°C
1.5
ID = 25µA
ID = 250µA
1.0 ID = 1.0mA
ID = 1.0A
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
300
ID
250
TOP
1.9A
3.0A
BOTTOM 12A
200
150
20
2VDS = 15V
380µs PULSE WIDTH
100
50
0
0 10 20 30 40
ID,Drain-to-Source Current (A)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Typ. Forward Transconductance vs. Drain Current Fig 15. Maximum Avalanche Energy vs. Drain Current
www.irf.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF6702M2DTR1PbF electronic component. |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| IRF6702M2DTR1PbF | The function is Power MOSFET ( Transistor ). | International Rectifier |
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