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What is B30NF10?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "STB30NF10".


B30NF10 Datasheet PDF - STMicroelectronics

Part Number B30NF10
Description STB30NF10
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STB30NF10
STP30NF10 - STP30NF10FP
N-channel 100V - 0.038- 35A - D2PAK/TO-220/TO-220FP
Low gate charge STripFET™ II Power MOSFET
General features
Type
STB30NF10
STP30NF10
STP30NF10FP
VDSS
100V
100V
100V
RDS(on)
<0.045
<0.045
<0.045
ID
35A
35A
35A
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Sales type
STB30NF10T4
STP30NF10
STP30NF10FP
Marking
B30NF10
P30NF10
P30NF10FP
Package
D2PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
June 2006
Rev 2
1/16
www.st.com
16

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B30NF10 equivalent
STB30NF10 - STP30NF10 - STP30NF10FP
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 30A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 30A,
di/dt = 100A/µs,
VDD = 55V, Tj = 150°C
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
35 A
140 A
1.3 V
110 ns
390 nC
7.5 A
5/16


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Part Details

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