2SA1306 Datasheet PDF - INCHANGE
Part Number | 2SA1306 | |
Description | Silicon PNP Power Transistors | |
Manufacturers | INCHANGE | |
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min)-2SA1306
= -180V(Min)-2SA1306A
= -200V(Min)-2SA1306B
·Complement to Type 2SC3298/A/B
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
2SA1306
2SA1306A
2SA1306B
-160
-180
-200
V
VCEO
Collector-Emitter
Voltage
2SA1306
2SA1306A
2SA1306B
-160
-180
-200
V
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-5 V
-1.5 A
-0.15
A
20 W
150 ℃
-55~150 ℃
isc Product Specification
2SA1306/A/B
isc Website:www.iscsemi.cn
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SA1306 electronic component. |
Information | Total 2 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ 2SA1306.PDF Datasheet ] |
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