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What is BAV70M?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "High-speed switching diodes".


BAV70M Datasheet PDF - NXP Semiconductors

Part Number BAV70M
Description High-speed switching diodes
Manufacturers NXP Semiconductors　
Logo NXP Semiconductors Logo　


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BAV70 series
High-speed switching diodes
Rev. 8 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV70
SOT23 -
BAV70M
SOT883 SC-101
BAV70S
SOT363 SC-88
BAV70T
BAV70W
SOT416
SOT323
SC-75
SC-70
JEDEC
Package
configuration
TO-236AB small
- leadless ultra
small
- very small
- ultra small
- very small
Configuration
dual common cathode
dual common cathode
quadruple common
cathode/common cathode
dual common cathode
dual common cathode
1.2 Features and benefits
High switching speed: trr 4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: Cd 1.5 pF
Reverse voltage: VR 100 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
VR = 80 V
Min Typ
-
-
[1] -
-
-
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
Max
0.5
100
4
Unit
A
V
ns

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BAV70M equivalent
NXP Semiconductors
BAV70 series
High-speed switching diodes
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Per diode
VF forward voltage
[1]
IF = 1 mA
-
IF = 10 mA
-
IF = 50 mA
-
IF = 150 mA
-
IR reverse current VR = 25 V
-
VR = 80 V
-
VR = 25 V; Tj = 150 C -
VR = 80 V; Tj = 150 C -
Cd
diode capacitance
VR = 0 V; f = 1 MHz
-
trr reverse recovery time
[2] -
VFR forward recovery voltage
[3] -
Typ
-
-
-
-
-
-
-
-
-
-
-
[1] Pulse test: tp 300 s;   0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
[3] When switched from IF = 10 mA; tr = 20 ns.
Max Unit
715 mV
855 mV
1V
1.25 V
30 nA
0.5 A
30 A
100 A
1.5 pF
4 ns
1.75 V
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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