What is LS4448?

This electronic component, produced by the manufacturer "Diotec Semiconductor", performs the same function as "Small Signal SMD Switching Diodes".

LS4448 Datasheet PDF - Diotec Semiconductor

Part Number LS4448
Description Small Signal SMD Switching Diodes
Manufacturers Diotec Semiconductor 
Logo Diotec Semiconductor Logo 

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LS4148, LS4448
LS4148, LS4448
Small Signal SMD Switching Diodes
Ultraschnelle SMD-Kleinsignaldioden
IFAV = 150...300 mA VRRM = 50...100 V
VF < 1.0 V
IFSM = 2000...4000 mA
Tjmax = 200°C
trr < 4 ns
Version 2015-10-27
~ SOD-80C
Glass Quadro-MiniMELF
Typical Applications
Signal processing,
High-speed switching
Commercial grade 1)
Typische Anwendungen
Schnelles Schalten
Standardausführung 1)
Quadro glass body
Very high switching speed
Low junction capacitance
Low leakage current
Compliant to RoHS, REACH,
Conflict Minerals 1)
Extrem schnelles Schalten
Niedrige Sperrschichtkapazität
Niedriger Sperrstrom
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
2500 / 7“
Gegurtet auf Rolle
Dimensions - Maße [mm]
Weight approx.
Solder & assembly conditions
0.04 g
Gewicht ca.
Löt- und Einbaubedingungen
MSL = 1
Maximum ratings (TA = 25°C)
Power dissipation − Verlustleistung
Max. average forward current – Dauergrenzstrom (dc)
Repetitive peak forward current – Periodischer Spitzenstrom
Non repetitive peak forward surge current
Reverse voltage – Sperrspannung
tp ≤ 1 s
tp ≤ 1 µs
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Grenzwerte (TA = 25°C)
LS4148, LS4448
Ptot 500 mW 2)
IFAV 150 mA 3)
IFRM 300 mA 3)
IFSM 500 mA 3)
VR 75 V
100 V
Tj -55...+175°C
TS -55…+175°C
Characteristics (Tj = 25°C)
Forward voltage
Leakage current – Sperrstrom 3)
Leakage current – Sperrstrom, Tj = 125°C 4)
IF = 50 mA
IF = 5 mA
IF = 100 mA
VR = 20 V
VR = 75 V
VR = 20 V
VR = 75 V
Kennwerte (Tj = 25°C)
VF < 1.0 V
VF 0.62...0.72 V
VF < 1 V
IR < 25 nA
IR < 5 µA
IR < 30 µA
IR < 50 µA
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
3 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG

Part Details

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