SBAS70-04LT1G Datasheet PDF - ON Semiconductor
|Description||Dual Series Schottky Barrier Diode|
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Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Non−Repetitive Peak Forward
Surge Current (t ≤ 1.0 s)
VR 70 V
IFSM 100 mA
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage
TJ, Tstg −55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
70 VOLTS SCHOTTKY
CG M G
CG = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3000 / Tape &
3000 / Tape &
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
© Semiconductor Components Industries, LLC, 2013
February, 2013 − Rev. 10
Publication Order Number:
On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SBAS70-04LT1G electronic component.
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|SBAS70-04LT1G||The function is Dual Series Schottky Barrier Diode.|
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