BTA316-600E Datasheet PDF - NXP Semiconductors
Part Number | BTA316-600E | |
Description | 3Q Hi-Com Triac | |
Manufacturers | NXP Semiconductors | |
Logo | ||
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3Q Hi-Com Triac
5 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package.
This "series E" triac balances the requirements of commutation performance and gate
sensitivity. The "sensitive gate" "series E" is intended for interfacing with low power
drivers including microcontrollers.
2. Features and benefits
• 3Q technology for improved noise immunity
• Direct interfacing with low power drivers and microcontrollers
• Good immunity to false turn-on by dV/dt
• High commutation capability with sensitive gate
• High voltage capability
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
3. Applications
• Electronic thermostats (heating and cooling)
• High power motor controls e.g. washing machines and vacuum cleaners
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 101 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 140 A
- - 16 A
- - 10 mA
- - 10 mA
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NXP Semiconductors
BTA316-600E
3Q Hi-Com Triac
103
ITSM
(A)
(1)
003aab671
102
IT ITSM
t
tp
Tj(init) = 25 °C max
10
10-5
10-4
10-3
10-2
10-1
tp (s)
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA316-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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Information | Total 13 Pages | |
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