IRL540S Datasheet PDF - Vishay
Part Number | IRL540S | |
Description | Power MOSFET ( Transistor ) | |
Manufacturers | Vishay | |
Logo | ||
There is a preview and IRL540S download ( pdf file ) link at the bottom of this page. Total 9 Pages |
Preview 1 page No Preview Available ! Power MOSFET
IRL540S, SiHL540S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
100
VGS = 5 V
64
Qgs (nC)
9.4
Qgd (nC)
27
Configuration
Single
0.077
D2PAK (TO-263)
D
GD
S
G
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHL540S-GE3
IRL540SPbF
SiHL540S-E3
D2PAK (TO-263)
SiHL540STRL-GE3a
IRL540STRLPbFa
SiHL540STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 5 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 841 μH, Rg = 25 , IAS = 28 A (see fig. 12).
c. ISD 28 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
100
± 10
28
20
110
1.0
0.025
440
28
15
150
3.7
5.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90386
S11-1045-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
|
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRL540S, SiHL540S
Vishay Siliconix
VDS
VGS
Rg
RD
D.U.T.
5V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
Rg
5V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
VDS
IAS
VDS
tp
VDD
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 90386
S11-1045-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Preview 5 Page |
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Information | Total 9 Pages | |
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