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IRFZ24L Datasheet PDF - Vishay

Part Number IRFZ24L
Description Power MOSFET
Manufacturers Vishay 
Logo Vishay Logo 

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IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
60
VGS = 10 V
25
Qgs (nC)
5.8
Qgd (nC)
11
Configuration
Single
0.10
I2PAK (TO-262)
D2PAK (TO-263)
D
G
SD
D
G
S
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHFZ24S-GE3
IRFZ24SPbF
SiHFZ24S-E3
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRFZ24S, SiHFZ24S)
• Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance
in any existing surface mount package. The D2PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application. The through-hole
version (IRFZ24L, SiHFZ24L) is available for low-profile
applications.
D2PAK (TO-263)
SiHFZ24STRR-GE3
-
-
I2PAK (TO-262)
-
IRFZ24LPbF
SiHFZ24L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb, e
EAS
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C
TA = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 400 μH, Rg = 25 , IAS = 17 A (see fig. 12).
c. ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ24, SiHFZ24 data and test conditions.
LIMIT
60
± 20
17
12
68
0.40
100
60
3.7
4.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90366
S11-1063-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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IRFZ24L equivalent
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width 1 µs
Duty factor 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
Rg
10 V
tp
L
D.U.T.
IAS
0.01 W
+
- V DD
VDS
IAS
VDS
tp
VDD
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 90366
S11-1063-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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