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PDF MDF4N65B Data sheet ( Hoja de datos )
| Número de pieza | MDF4N65B | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDF4N65B
N-Channel MOSFET 650V, 4.0A, 2.2Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 650V
ID = 4.0A
RDS(ON) ≤ 2.2 Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Jul. 2012 Version 1.2
1
G
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Symbol
RθJA
RθJC
S
Rating
650
±30
4.0*
2.6*
16*
35
0.28
3.5
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Rating
62.5
3.55
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Jul. 2012 Version 1.2
S y mbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
￠R
M in
4 .5 0
0 .6 3
1 .1 5
0 .3 3
1 5 .4 7
9 .6 0
2 .3 4
6 .4 8
1 2 .2 4
2 .7 9
2 .5 2
3 .1 0
3 .0 0
Nom
2 .5 4
M ax
4 .9 3
0 .9 1
1 .4 7
0 .6 3
1 6 .1 3
1 0 .7 1
2 .8 4
6 .9 0
1 3 .7 2
3 .6 7
2 .9 6
3 .5 0
3 .5 5
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDF4N65B.PDF ] | |
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