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FGA70N33BTD Datasheet PDF - Fairchild Semiconductor

Part Number FGA70N33BTD
Description 70A PDP IGBT
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 

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FGA70N33BTD datasheet, circuit
FGA70N33BTD
330V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.7V @ IC = 70A
• High input impedance
• Fast switching
• RoHS Compliant
Applications
• PDP System
August 2011
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP
applications where low conduction and switching losses are
essential.
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
ICpulse(1)*
IC pulse(2)*
PD
VRRM
IF(AV)
IFSM
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
@ TC = 25oC
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Peak Repetitive Reverse Voltage of Diode
Average Rectified Forward Current of diode @ TC = 100oC
Non-repetitive Peak Surge Current of diode
60Hz Single Half-Sine wave
TJ, Tstg
TL
Operating Junction Temperature and Storage Temperrature
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D< 0.01, pluse width < 5usec
*IC_pulse limited by max Tj
©2011 Fairchild Semiconductor Corporation
FGA70N33BTD Rev. C0
1
G
E
Ratings
330
± 30
160
220
149
60
330
10
100
-55 to +150
300
Typ.
--
--
--
Max.
0.84
1.16
40
Units
V
V
A
A
W
W
V
A
A
oC
oC
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com

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FGA70N33BTD equivalent
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
40A
4
70A
IC = 20A
0
04
8
12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 100V
9
200V
6
3
0
0 10 20 30 40 50 60
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
200
100
tr
10
1
0
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
15 30 45
Gate Resistance, RG [Ω]
60
Figure 8. Capacitance Characteristics
10000
Common Emitter
VGE = 0V, f = 1MHz
Cies TC = 25oC
1000
Coes
Cres
100
10
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
500
10μs
100
100μs
10
1ms
1
Single Nonrepetitive
0.1 Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
10ms
DC
100 400
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
tf
100
10
0
td(off)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
15 30 45
Gate Resistance, RG [Ω]
60
FGA70N33BTD Rev. C0
5
www.fairchildsemi.com

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Information Total 9 Pages
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