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PDF ATP207 Data sheet ( Hoja de datos )
| Número de pieza | ATP207 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Ordering number : ENA1319A
ATP207
N-Channel Power MOSFET
40V, 65A, 9.1mΩ, Single ATPAK
http://onsemi.com
Features
• Low ON-resistance
• 4.5V drive
• Halogen free compliance
• Large current
• Slim package
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=50μH, IAV=33A
*2 L≤50μH, Single pulse
EAS
IAV
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
40
±20
65
195
50
150
--55 to +150
35
33
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP207-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP207
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/91708PA TIIM TC-00001572 No. A1319-1/7
1 page  
Taping Specification
ATP207-TL-H
ATP207
No. A1319-5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ATP207.PDF ] | |
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