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ATP207 PDF Datasheet - ON Semiconductor

Part Number ATP207
Description N-Channel Power MOSFET
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 
Preview
Preview ( 7 pages )
		
ATP207 datasheet, circuit
Ordering number : ENA1319A
ATP207
N-Channel Power MOSFET
40V, 65A, 9.1mΩ, Single ATPAK
http://onsemi.com
Features
Low ON-resistance
4.5V drive
Halogen free compliance
Large current
Slim package
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=50μH, IAV=33A
*2 L50μH, Single pulse
EAS
IAV
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
40
±20
65
195
50
150
--55 to +150
35
33
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP207-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP207
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/91708PA TIIM TC-00001572 No. A1319-1/7

1 page
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ATP207 pdf, schematic
ATP207
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=33A
ID=33A, VGS=10V
ID=17A, VGS=4.5V
VDS=20V, f=1MHz
See specied Test Circuit.
VDS=20V, VGS=10V, ID=65A
IS=65A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=20V
ID=33A
RL=0.61Ω
D VOUT
ATP207
P.G 50Ω S
min
40
Ratings
typ
1.5
12 20
7
11
2710
330
220
27
290
170
110
54
14
11
1.0
max
1
±10
2.6
9.1
15.5
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
ATP207-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1319-2/7

2 Page
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ATP207 equivalent
Taping Specication
ATP207-TL-H
ATP207
No. A1319-5/7

5 Page





Information Total 7 Pages
Download[ ATP207.PDF Datasheet ]

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